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High Voltage BLDC Motor Driver MOSFET 210W Power Switching Application

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High Voltage BLDC Motor Driver MOSFET 210W Power Switching Application

High Voltage BLDC Motor Driver MOSFET 210W Power Switching Application
High Voltage BLDC Motor Driver MOSFET 210W Power Switching Application High Voltage BLDC Motor Driver MOSFET 210W Power Switching Application

Large Image :  High Voltage BLDC Motor Driver MOSFET 210W Power Switching Application

Product Details:
Place of Origin: China
Brand Name: JUYI
Model Number: JY11M
Payment & Shipping Terms:
Minimum Order Quantity: 1 set
Price: Negotiable
Packaging Details: PE bag+ carton
Delivery Time: 5-10 days
Payment Terms: T/T,L/C,Paypal
Supply Ability: 1000sets/day

High Voltage BLDC Motor Driver MOSFET 210W Power Switching Application

Description
Drain-Source Voltage: 100 V Gate-Source Voltage: ±20V
Maximum Power Dissipation: 210W Pulsed Drain Current: 395A
High Voltage: Yes Reverse Body Recovery: Yes
High Light:

pwm mosfet driver

,

mosfet stepper driver

 

JY11M N Channel Enhancement Mode Power MOSFET

 

 

GENERAL DESCRIPTION


The JY11M utilizes the latest trench processing techniques to achieve the high cell
density and reduces the on-resistance with high repetitive avalanche rating. These
features combine to make this design an extremely efficient and reliable device for
use in power switching application and a wide variety of other applications.


FEATURES


● 100V/110A, RDS(ON) =6.5mΩ@VGS=10V
● Fast switching and reverse body recovery
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation


APPLICATIONS
● Switching application
● Hard switched and high frequency circuits
● Power Management for Inverter Systems

 

Absolute Maximum Ratings(Tc=25ºC Unless Otherwise Noted)

Symbol Parameter Limit Unit
VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage ± 20 V
ID Continuous Drain
Current
Tc=25ºC 110 A
Tc=100ºC 82
IDM Pulsed Drain Current 395 A
PD Maximum Power Dissipation 210 W
TJ TSTG Operating Junction and Storage Temperature
Range
-55 to +175 ºC
RθJC Thermal Resistance-Junction to Case 0.65 ºC/W
RθJA Thermal Resistance-Junction to Ambient 62

 


Electrical Characteristics(Ta=25ºC Unless Otherwise Noted)

Symbol Parameter Conditions Min Typ Max Unit
Static Characteristics
BVDSS Drain-Source
Breakdown Voltage
VGS=0V,IDS=250uA 100 V
IDSS Zero Gate Voltage
Drain Current
VDS=100V,VGS=0V 1 uA
IGSS Gate-Body Leakage
Current
VGS=± 20V,VDS=0V ± 100 nA
VGS(th) Gate Threshold
Voltage
VDS= VGS, IDS=250uA 2.0 3.0 4.0 V
RDS(ON) Drain-Source
On-state Resistance
VGS=10V,IDS=40A 6.5
gFS Forward
Transconductance
VDS=50V, IDS=40A 100 S

High Voltage BLDC Motor Driver MOSFET 210W Power Switching Application 0
 



DOWNLOAD JY11M USER MANUAL

High Voltage BLDC Motor Driver MOSFET 210W Power Switching Application 1 JY11M.pdf

 

Contact Details
Shanghai Juyi Electronic Technology Development Co., Ltd
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