JUYI N Channel Super Trench Power MOSFET with fast switching and reverse body recovery
Description
JUYI N Channel Super Trench Power MOSFET with fast switching and reverse body recovery
GENERAL DESCRIPTION
The product utilizes the latest super trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
FEATURES
● 100V/155A, RDS(ON) =3.5mΩ@VGS=10V(Typical)
● Fast switching and reverse body recovery
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
APPLICATIONS
● DC/DC converters
● Hard switched and high frequency circuits
● Synchronous rectification
PIN DESCRIPTION
Absolute Maximum Ratings(Tc=25ºC Unless Otherwise Noted)