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BLDC Motor Driver MOSFET

JUYI N Channel High Voltage BLDC Motor Driver MOSFET 210W Power Switching Application

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High Voltage BLDC Motor Controller

JUYI N Channel High Voltage BLDC Motor Driver MOSFET 210W Power Switching Application

Brand Name:	JUYI
Model Number:	JY11M
MOQ:	1 set
Price:	Negotiable
Packaging Details:	PE bag+ carton
Payment Terms:	T/T,L/C,Paypal

Detail Information

Product Description

Detail Information

Place of Origin:

China

Drain-Source Voltage:

100 V

Gate-Source Voltage:

Maximum Power Dissipation:

Pulsed Drain Current:

High Voltage:

Reverse Body Recovery:

Supply Ability:

1000sets/day

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Product Description

JY11M N Channel Enhancement Mode Power MOSFET

GENERAL DESCRIPTION

The JY11M utilizes the latest trench processing techniques to achieve the high cell
density and reduces the on-resistance with high repetitive avalanche rating. These
features combine to make this design an extremely efficient and reliable device for
use in power switching application and a wide variety of other applications.

FEATURES

● 100V/110A, RDS(ON) =6.5mΩ@VGS=10V
● Fast switching and reverse body recovery
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation

APPLICATIONS
● Switching application
● Hard switched and high frequency circuits
● Power Management for Inverter Systems

Absolute Maximum Ratings(Tc=25ºC Unless Otherwise Noted)

Symbol	Parameter	Limit	Unit
VDS	Drain-Source Voltage	100	V
VGS	Gate-Source Voltage	± 20	V
ID	Continuous Drain Current	Tc=25ºC	110	A
Tc=100ºC	82
IDM	Pulsed Drain Current	395	A
PD	Maximum Power Dissipation	210	W
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to +175	ºC
RθJC	Thermal Resistance-Junction to Case	0.65	ºC/W
RθJA	Thermal Resistance-Junction to Ambient	62

Electrical Characteristics(Ta=25ºC Unless Otherwise Noted)

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
Static Characteristics
BVDSS	Drain-Source Breakdown Voltage	VGS=0V,IDS=250uA	100	V
IDSS	Zero Gate Voltage Drain Current	VDS=100V,VGS=0V	1	uA
IGSS	Gate-Body Leakage Current	VGS=± 20V,VDS=0V	± 100	nA
VGS(th)	Gate Threshold Voltage	VDS= VGS, IDS=250uA	2.0	3.0	4.0	V
RDS(ON)	Drain-Source On-state Resistance	VGS=10V,IDS=40A	6.5	mΩ
gFS	Forward Transconductance	VDS=50V, IDS=40A	100	S

JUYI N Channel High Voltage BLDC Motor Driver MOSFET 210W Power Switching Application 0

DOWNLOAD JY11M USER MANUAL

JY11M.pdf

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