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JUYI JY16M Mosfet Power Controller High Efficiency Switch Mode Power For BLDC Motor Driver Board

JUYI JY16M Mosfet Power Controller High Efficiency Switch Mode Power For BLDC Motor Driver Board

Brand Name: JUYI
Model Number: JY16M
MOQ: 1 set
Price: Negotiable
Packaging Details: PE bag+ carton
Payment Terms: T/T,L/C,Paypal
Detail Information
Place of Origin:
China
Drain-Source Voltage:
600 V
Gate-Source Voltage:
±30V
Maximum Power Dissipation:
33W
Pulsed Drain Current:
16A
Application:
Lighting
Shape:
Square
Supply Ability:
1000sets/day
Highlight:

pwm mosfet driver

,

mosfet stepper driver

Product Description

JY16M N Channel 600V  TO220F-3 Package
Enhancement Mode Power MOSFET for BLDC motor driver

GENERAL DESCRIPTION
The JY16M utilizes the latest trench processing techniques to achieve the high cell
density and reduces the on-resistance with high repetitive avalanche rating. These
features combine to make this design an extremely efficient and reliable device for
use in power switching application and a wide variety of other applications.


FEATURES
● 600V/4A, RDS(ON) =2.6Ω@VGS=10V
● Fast switching and reverse body recovery
● Excellent package for good heat dissipation


APPLICATIONS
● Lighting
● High efficiency switch mode power supplies
 

Absolute Maximum Ratings(Tc=25ºC Unless Otherwise Noted)

Symbol Parameter Rating Unit
VDS Drain-Source Voltage 600 V
VGS Gate-Source Voltage ± 30 V
ID Continuous Drain
Current
Tc=25ºC 4 A
Tc=100ºC 2.9
IDM Pulsed Drain Current 16 A
PD Maximum Power Dissipation 33 W
TJ TSTG Operating Junction and Storage Temperature
Range
-55 to +150 ºC
RθJC Thermal Resistance-Junction to Case 1.5 ºC/W
RθJA Thermal Resistance-Junction to Ambient 62


Electrical Characteristics(Tc=25ºC Unless Otherwise Noted)

Symbol Parameter Conditions Min Typ Max Unit
Static Characteristics
BVDSS Drain-Source
Breakdown Voltage
VGS=0V,IDS=250uA 600 V
IDSS Zero Gate Voltage
Drain Current
VDS=600V,VGS=0V 1 uA
IGSS Gate-Body Leakage
Current
VGS=± 30V,VDS=0V ± 100 nA
VGS(th) Gate Threshold
Voltage
VDS= VGS, IDS=250uA 2.0 3.0 4.0 V
RDS(ON) Drain-Source
On-state Resistance
VGS=10V,IDS=4A 2.6 2.8 Ω


Electrical Characteristics(Tc=25ºC Unless Otherwise Noted)

Symbol Parameter Conditions Min Typ Max Unit
Drain-Source Diode Characteristics
VSD Diode Forward
Voltage
VGS=0V,ISD=2A 1.5 V
Trr Reverse Recovery Time ISD=4A
di/dt=100A/us
260 ns
Qrr Reverse Recovery Charge 1.5 nC
Dynamic Characteristics
RG Gate Resistance VGS=0V,VDS=0V,
f=1MHZ
5 Ω
Td(on) Turn-on Delay Time VDS=300V,
R
G=25Ω,
I
DS =4A, VGS=10V,
15 ns
Tr Turn-on Rise Time 48
Td(off) Turn-off Delay Time 28
Tf Turn-off Fall Time 35
CISS Input Capacitance VGS=0V,
V
DS=25V,
f=1.0MHz
528 pF
COSS Output Capacitance 72
CRSS Reverse Transfer
Capacitance
9
Qg Total Gate Charge VDS=480V,ID=4A,
V
GS=10V
16 nC
Qgs Gate-Source Charge 3.5
Qgd Gate-Drain Charge 7.1


 

 

DOWNLOAD JY16M USER MANUAL

JUYI JY16M Mosfet Power Controller High Efficiency Switch Mode Power For BLDC Motor Driver Board 0JY16M.pdf