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Product Details:
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| Drain-Source Voltage: | 40V | Gate-Source Voltage: | ±20V |
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| Pulsed Drain Current: | 350A | Maximum Power Dissipation: | 80W |
| Model Number: | JY4N8M | Reverse Body Recovery: | Yes |
| High Light: | high current mosfet driver,pwm mosfet driver |
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JY4N8M N Channel Enhancement Mode Power surface mount MOSFET for BLDC motor driver
GENERAL DESCRIPTION:
The JY4N8M utilizes the latest trench processing techniques to achieve the high cell
density and reduces the on‐resistance with low gate charge. These features combine
to make this design an extremely efficient and reliable device for use in power
switching application and a wide variety of other applications.
FEATURES:
● 40V/80A, RDS(ON) ≤6.5mΩ@VGS=10V
● Fast switching and reverse body recovery
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
APPLICATIONS:
● Hard switched and high frequency circuits
● Power Management for Inverter Systems
DOWNLOAD JY4N8M USER MANUAL
Contact Person: Ms. Lisa
Tel: +86-18538222869
