|
Product Details:
|
Drain-Source Voltage: | 500V | Gate-Source Voltage: | ±30 |
---|---|---|---|
Pulsed Drain Current: | 30A | Maximum Power Dissipation: | 80W |
JUYI 500V/8A N Channel Enhancement Mode Power MOSFET
Symbol
|
Parameter
|
Limit
|
Unit | |
VDS
|
Drain-Source Voltage
|
500
|
V | |
VGS
|
Gate-Source Voltage
|
±30 | V | |
ID
|
Continuous Drain
Current
|
Tc=25ºC
|
8 | A |
Tc=100ºC
|
4.8 | |||
IDM
|
Pulsed Drain Current
|
30 | A | |
PD
|
Maximum Power Dissipation
|
80 | W | |
TJ TSTG
|
Operating Junction and Storage Temperature Range
|
-55+150
|
ºC | |
RθJC
|
Thermal Resistance-Junction to Case
|
1.56 |
℃/W
|
Contact Person: Ms. Lisa
Tel: +86-18538222869