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JUYI 500V/8A N Channel Enhancement Mode Power MOSFET

JUYI 500V/8A N Channel Enhancement Mode Power MOSFET

Brand Name: JUYI
Model Number: JY8N5M
MOQ: 10set
Price: Negotiable
Packaging Details: PE bag+ carton
Payment Terms: L/C, T/T,Paypal
Detail Information
Place of Origin:
China
Drain-Source Voltage:
500V
Gate-Source Voltage:
±30
Pulsed Drain Current:
30A
Maximum Power Dissipation:
80W
Supply Ability:
1000sets/day
Highlight:

500V Power MOSFET

,

8A Power MOSFET

,

N Channel Power MOSFET

Product Description

JUYI 500V/8A N Channel Enhancement Mode Power MOSFET

 

 

GENERAL DESCRIPTION
 
The product utilizes the advanced planar processing techniques to achieve the highcell density and reduces the on-resistance with high repetitive
avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
 
FEATURES
● 500V/8A, RDS(ON) =0.75Ω@VGS=10V(Typical)
● Fast switching and reverse body recovery
● Excellent package for good heat dissipation
 
APPLICATIONS
● Lighting
● High efficiency switch mode power supplies
 
PIN DESCRIPTION
JUYI 500V/8A N Channel Enhancement Mode Power MOSFET 0
Absolute Maximum Ratings(Tc=25ºC Unless Otherwise Noted)
Symbol
Parameter
Limit
Unit
VDS
Drain-Source Voltage
500
V
VGS
Gate-Source Voltage
±30 V
ID
Continuous Drain
Current
Tc=25ºC
8 A
Tc=100ºC
4.8
IDM
Pulsed Drain Current
30 A
PD
Maximum Power Dissipation
80 W
TJ  TSTG
Operating Junction and Storage Temperature Range
-55+150
ºC
RθJC
Thermal Resistance-Junction to Case
1.56
℃/W

 

Electrical Characteristics(Tc=25ºC Unless Otherwise Noted)
JUYI 500V/8A N Channel Enhancement Mode Power MOSFET 1
Electrical Characteristics(Ta=25ºC Unless Otherwise Noted)
JUYI 500V/8A N Channel Enhancement Mode Power MOSFET 2