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JUYI 500V/8A N Channel Enhancement Mode Power MOSFET with Fast switching and reverse body recovery

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China Shanghai Juyi Electronic Technology Development Co., Ltd certification
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JUYI 500V/8A N Channel Enhancement Mode Power MOSFET with Fast switching and reverse body recovery

JUYI 500V/8A N Channel Enhancement Mode Power MOSFET with Fast switching and reverse body recovery
JUYI 500V/8A N Channel Enhancement Mode Power MOSFET with Fast switching and reverse body recovery
JUYI 500V/8A N Channel Enhancement Mode Power MOSFET with Fast switching and reverse body recovery JUYI 500V/8A N Channel Enhancement Mode Power MOSFET with Fast switching and reverse body recovery JUYI 500V/8A N Channel Enhancement Mode Power MOSFET with Fast switching and reverse body recovery JUYI 500V/8A N Channel Enhancement Mode Power MOSFET with Fast switching and reverse body recovery

Large Image :  JUYI 500V/8A N Channel Enhancement Mode Power MOSFET with Fast switching and reverse body recovery

Product Details:
Place of Origin: China
Brand Name: JUYI
Model Number: JY8N5M
Payment & Shipping Terms:
Minimum Order Quantity: 10set
Price: Negotiable
Packaging Details: PE bag+ carton
Delivery Time: 5-8 working days
Payment Terms: L/C, T/T,Paypal
Supply Ability: 1000sets/day

JUYI 500V/8A N Channel Enhancement Mode Power MOSFET with Fast switching and reverse body recovery

Description
Color: Black Channel: N Channel
Fast Switching Speed: Yes Operating Range: -55℃ To 150℃
Input Logic Compatible: 3.3V And 5V High Frequency Circuits: Yes

JUYI 500V/8A N Channel Enhancement Mode Power MOSFET with Fast switching and reverse body recovery

 

 

GENERAL DESCRIPTION
The product utilizes the advanced planar processing techniques to achieve the highcell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
 
FEATURES
500V/8A, RDS(ON) =0.75Ω@VGS=10V(Typical)
Fast switching and reverse body recovery
Excellent package for good heat dissipation
 
APPLICATIONS
Lighting
High efficiency switch mode power supplies
 
PIN DESCRIPTION
JUYI 500V/8A N Channel Enhancement Mode Power MOSFET with Fast switching and reverse body recovery 0
Absolute Maximum Ratings(Tc=25ºC Unless Otherwise Noted)
Symbol Parameter Limit Unit
VDS Drain-Source Voltage 500 V
VGS Gate-Source Voltage ±30 V
ID
Continuous Drain
Current
Tc=25ºC 8 A
Tc=100ºC 4.8
IDM Pulsed Drain Current 30 A
PD Maximum Power Dissipation 80 W
TJ TSTG Operating Junction and Storage Temperature Range -55+150 ºC
RθJC Thermal Resistance-Junction to Case 1.56 ℃/W
 

 

Electrical Characteristics(Tc=25ºC Unless Otherwise Noted)
JUYI 500V/8A N Channel Enhancement Mode Power MOSFET with Fast switching and reverse body recovery 1
Electrical Characteristics(Ta=25ºC Unless Otherwise Noted)
JUYI 500V/8A N Channel Enhancement Mode Power MOSFET with Fast switching and reverse body recovery 2

JUYI 500V/8A N Channel Enhancement Mode Power MOSFET with Fast switching and reverse body recovery 3

 

JUYI 500V/8A N Channel Enhancement Mode Power MOSFET with Fast switching and reverse body recovery 4

Contact Details
Shanghai Juyi Electronic Technology Development Co., Ltd

Contact Person: Ms. Lisa

Tel: +86-18538222869

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